Abstract
Pure phase MgZr1−xSnxNb2O8 (x = 0, 0.1, 0.15, 0.2, 0.25 and 0.3) ceramics were first synthesized through conventional solid-state method. The theoretical dielectric polarizabilities, packing fractions and bond valences of MgZr1−xSnxNb2O8 ceramics were calculated in order to investigate the correlation between the crystal structure and microwave dielectric properties. A small amount of Sn4+ substituted for Zr4+ effectively improved the quality factor, but excessive substitution is not conducive to the improvement of Q × f value. Excellent microwave dielectric properties of εr = 24.91, Q × f = 94,014.2GHz, τf = −43.93ppm/°C were obtained for the MgZr1−xSnxNb2O8 ceramics with x = 0.15 sintered at 1260°C.
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