Crystal plane‐dependent ethanol gas sensing of ZnO studied by low‐energy He+ ion scattering combined with pulsed jet technique

Abstract

Although a semiconductor gas sensor is promising in the future gas sensing technology, the material design for highly sensitive and selective gas sensing is quite challenging. The crystal plane dependence of gas sensing has been studied using various nano‐crystal samples with a controlled crystal facet to obtain a clue for designing the sensing material, but the contact effect between nano‐crystal particles has often hindered the straightforward analysis. In the present study, the crystal plane dependence of ethanol (EtOH) sensing by ZnO, one of the most widely studied target gas‐sensing material combinations, was investigated from an analytical approach. We applied a newly developed low‐energy He+ ion scattering spectroscopy (He+ LEIS) combined with the pulsed jet technique for analyzing the surface structure of ZnO during the EtOH sensing. In this novel technique, the free gas jet is periodically blown onto the sample surface to simulate the gas‐sensing surface in a vacuum as one under the realistic working condition, while the background pressure is maintained low enough for operating He+ LEIS. It was found that the divalent oxygen adatom on the outermost surface is consumed during the EtOH sensing while no change occurs in the concentration of the lattice oxygen on the Zn‐terminated (0001) surface. The availability of this oxygen adsorbate determines the dissociative EtOH adsorption probability on the surface; hence it determines the EtOH sensing sensitivity, which is substantially higher on Zn‐terminated (0001) than other dominant low‐index surfaces, such as O‐terminated (000 ), (10 0), and (11 0).