Abstract
A β‐Ga2O3 thin film was formed on a (0001) c‐plane GaN template substrate by gallium evaporation in an oxygen plasma. From X‐ray diffraction measurements using ω–2θ and ϕ scans, the film orientation was found to be () β‐Ga2O3 || (0001) GaN || (0001) sapphire. In addition, the β‐Ga2O3 had a sixfold domain structure in which the (010) planes in each crystal domain were parallel to the {} planes of GaN. This structure was confirmed by cross‐sectional and plan‐view transmission electron microscopy images and selected‐area electron diffraction patterns. The crystal orientation of the β‐Ga2O3 formed on (0001) c‐plane GaN is explained using an atomic‐arrangement model.
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