Abstract
We have prepared Ta thin films on Si(100) and Si(111) substrates by increasing the substrate temperature from room temperature (RT) to 500 °C, using an ultrahigh-vacuum dc magnetron sputtering system. The obtained film crystallinities were evaluated by X-ray diffraction and X-ray pole figure analyses. It was found that the crystal phase of the prepared Ta films transforms gradually from the β-Ta phase to the α-Ta phase with increasing substrate temperature, and the epitaxial growth of the α-Ta(110) plane was realized at substrate temperatures of 400 °C on Si(100) and 200 °C on Si(111). In addition, it was also clarified that the α-Ta(110) films are grown epitaxially in a twin state on Si(100), while they are grown epitaxially in a triplet state on Si(111).
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