Abstract
Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.
Highlights
In recent years, the accuracy and the dimension of ultra-precision machining have reached nanoscale along with the development of science and technology
Method to Estimate the Amorphous Germanium Many researchers have found that monocrystalline silicon underwent amorphization in nanometric cutting and nanoindentation by molecular dynamics (MD) simulation and experimental study [7, 8, 10,11,12,13,14]
Monocrystalline germanium has similar phase transformations with silicon under pressure, and it was found that monocrystalline germanium become amorphous state in the machined region in Newtonian atoms y x z
Summary
The accuracy and the dimension of ultra-precision machining have reached nanoscale along with the development of science and technology. Monocrystalline germanium, a group IV elemental semiconductor, has been widely used in the fields of solar cell, infrared optics, and so on. As it has the periodic ordered arrangement of diamond structure, which is similar to silicon, the anisotropy feature of germanium during nano-machining should be paid more attention to. According to the previous researches, monocrystalline silicon underwent phase transformation from diamond cubic structure to Si-II (β-tin-Si) or amorphous structure in the loading process of nanometric cutting and nanoindentation [6,7,8,9,10,11,12].
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