Abstract
The micro-void growth by dislocation emission under tensile loading isexplored with focus on the influence of crystal orientations. Based onthe elastic theory, a dislocation emission criterion is formulated. Itis predicted that the preferential location of dislocation nucleationand its threshold stress are dependent on the crystal orientation.Large-scale molecular dynamics (MD) simulations are also performed forsingle crystal copper to illustrate the dislocation evolution patternassociated with a nano-void growth. The results are in line with thosegiven by the theoretical prediction. As revealed by MD simulations, thecharacteristics of void growth at micro-scale depend greatly on thecrystal-orientation.
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