Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides

Abstract

Thin films of SrBi4Ti4O15, a kind of bismuth layer-structured dielectrics (BLSDs), were prepared on platinized silicon wafers buffered by perovskite-type oxide interface layers, (100)LaNiO3/(111)Pt/TiO2/(100)Si and (001)Ca2Nb3O10-nanosheets/(111)Pt/TiO2/(100)Si, by chemical solution deposition (CSD). The Ca2Nb3O10 nanosheets were supported on a (111)Pt/TiO2/(100)Si substrate by dip coating using an aqueous dispersion, while (100)LaNiO3 was prepared by CSD. The (00l) planes of BLSD crystal were preferentially oriented on the surface of both substrates, which is caused by suitable lattice matching between the a-(b-)axis of BLSD and perovskite-type oxide layers. The film deposition on (001)Ca2Nb3O10 nanosheets yielded (001)-oriented BLSD films with higher crystallinity and smaller fluctuation in the tilting angle of the (001)BLSD plane than those on the (100)LaNiO3 interface layer. The dielectric constant (εr) of (001)-oriented SrBi4Ti4O15 film on (001)Ca2Nb3O10-nanosheets/(111)Pt/TiO2/(100)Si substrate was approximately 190, which was significantly stable against the change of frequency and bias voltage compared with that of the randomly-oriented SrBi4Ti4O15 film.