Abstract
Sputter deposition of nickel films at liquid nitrogen temperature was performed to clarify the effects of the surface migration of the deposited atoms. The film deposited at liquid nitrogen temperature and low Ar gas pressure had excellent (111) orientation and good crystallinity. Therefore, deposition at a low-temperature and low Ar gas pressure is a useful technique for obtaining film with excellent crystal orientation of the closest packing plane. Ion bombardment of the film surface during deposition at liquid nitrogen temperature led to a large degradation of the film crystallinity, but it had quite the opposite effect at room temperature, i.e., it promoted the (111) orientation of the film and improved the crystallinity of the film. These results indicate that the ion bombardment produced defects in the crystallites at a low temperature where migration of the deposited atoms was limited.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
