Abstract
We propose a theory of field induced crystal nucleation in disordered glass structure applicable to chalcogenide phase change memory. In the region of symmetry breaking strong electric fields, the nucleation is dominated by cylinder shaped particles with bias dependent nucleation barriers. Statistical fluctuations in microscopic structure of a glass translate into probabilistic distributions of induction times and threshold voltages having respectively log-normal and normal shape. These distributions are exponentially sensitive to the applied voltage, temperature, and material parameters.
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