Abstract
In this work, we firstly investigated controlling the lattice parameter of III- oxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed technique is promising to make ideal substrates in III- nitride epitaxy of LED, LD and transistors with a high quantum efficiency and small noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride epitaxy with computer driving.
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