Crystal Lattice Defects and Hall Mobility of Electrons in Si : Er∕ Si Layers Grown by Sublimation Molecular-Beam Epitaxy

Abstract

The density of crystal lattice defects in Si: Er layers grown through sublimation molecular-beam epitaxy at temperatures ranging from 520 to 580°C is investigated by a metallographic method, and the Hall mobility of electrons in these layers is determined. It is found that the introduction of erbium at a concentration of up to ∼5 × 1018 cm−3 into silicon layers is not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility.