Abstract
The effect of crystalline order on the anisotropy of spin accumulation in Si/oxide/ferromagnet tunnel devices has been investigated. The spin accumulation induced electrically in the silicon changes when the magnetization of the ferromagnet is rotated either from in-plane to perpendicular to the tunnel interface or when it is rotated within the plane of the magnetic layer. A fourfold in-plane anisotropy, which reflects the crystalline nature of the tunnel contact, is observed not only for crystalline MgO/Fe contacts, but also for devices with amorphous Al${}_{2}$O${}_{3}$ tunnel barrier and polycrystalline ferromagnetic electrode. The in-plane anisotropy is attributed to the direct coupling of states from the ferromagnet to those in the Si, as in coherent tunneling, causing anisotropy in devices in which only the nonmagnetic (Si) electrode is crystalline.
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