Crystal Growth, Thermal Stability and Electrical Transport Property of Double‐Doping (SnCd) System in Single‐Crystal β‐Zn4Sb3

Abstract

In this work, the effect of Cd and Sn atoms partly substitution for Zn on among crystal growth, thermal stability, mechanical, and electrical transport property in β‐Zn4Sb3 is reported. In a series of samples prepared from the atomic ratios of Zn:Sb:Cd:Sn = 4.4:3:x:3 (x = 0.2, 0.4, 0.6, and 0.8). Carrier concentration of all samples varies from 4.52 × 1019 to 6.42 × 1019 cm−3 as carrier mobility changes from 58.27 to 67.93 cm2 V−1 s−1 at room temperature. As a result, electrical transport properties of the samples are optimized by CdSn co‐doped. The experimental density of all the samples varies from 6.26 × 103 to 6.34 × 103 kg m−3 consistent with the theoretical value. The weight loss and melting point of the sample are determined to discuss thermal stability in the heating process in air, indicating that the single crystals β‐Zn4Sb3 possess an excellent thermal stability and it is practical importance in the TE application at high temperature. Consequently, the maximal power factor of 1.70 × 10−3 W m−1 K−2 is achieved at 540 K for the sample with initial Cd content x = 0.2, which is enhanced by 40% compared with the single‐doping system in β‐Zn4Sb3.