Crystal growth, quality characterization and THz properties of DAST crystals

Abstract

4‐N, N‐diethylamino‐4’‐N’‐methyl‐stilbazolium tosylate (DAST) crystals were grown by slope nucleation method (SNM). The crystal structure of grown DAST crystals was characterized by single crystal X‐ray diffraction with demonstrating X‐ray diffraction main peaks. The crystal defects were analyzed by the synchrotron radiation X‐ray topography. It was found that the unbalanced temperature gradient, the Teflon groove and the super saturation fluctuation were primary causes of crystal defects. Furthermore, widely tunable THz waves ranging from 1.16 to 16.71 THz were generated from 1 mm‐thick DAST crystal using the optical parametric oscillator (OPO). It was obtained that the THz output energy was 27.4 nJ (peak power of 2.74 W) and the highest conversion efficiency was 1.37 × 10−5 at 3.8 THz.