Abstract
Silicon carbide (SiC) is the most famous material to show polytypes with various stacking sequences but the same chemical composition. As for epitaxial growth of SiC, homoepitaxial growth of 6H-SiC was performed by liquid phase epitaxy (LPE) and chemical vapor deposition (CVD) for blue light-emitting diodes. This chapter reviews the CVD of silicon carbide (SiC) on SiC substrates. In step-controlled epitaxy, SiC growth is controlled by the diffusion of chemical reactants in a stagnant layer. Step-flow growth is essential to realize polytype replication in epilayers at the rather low temperatures of around 1500°C without 3C-SiC inclusions. The background doping level of epilayers could be reduced to less than 1x1014 cm-3by the growth under C-rich conditions, by which very high electron mobilities are obtained.
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