Abstract

Ce-doped Lu 2SiO 5 (LSO:Ce) crystals 35 mm in diameter have been successfully grown using a melt-supply double crucible method, where the supply was made by lifting the outer crucible. The melt in the outer crucible was introduced into the inner growth crucible through small holes bored into the inner crucible wall. Ce concentrations were measured along the growth axis and were characterized by ICP-AES. The crystals had a superior uniformity compared to those grown by the conventional CZ method.

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