Abstract
We have grown GaN on (Mn, Zn)Fe 2 O 4 substrates by pulsed laser deposition (PLD) without using a buffer layer and investigated their structural properties by high resolution X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The RHEED pattern changed from sharp streaks into clear spots at the early stage of the film growth, what indicates that the growth of GaN started in the two-dimensional mode and it changed into the three-dimensional mode due to the stress build-up. The RHEED and XRD observations have revealed that hexagonal GaN(0001) grows on (Mn,Zn)Fe 2 O 4 (111) with the crystal orientation relationship of [1120]GaN//[011](Mn,Zn)Fe 2 O 4 . The lattice mismatch for this alignment is calculated to be 3.5%. The FWHM value of the 0002 GaN rocking curve has been as low as 0.05°.
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