Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane

Abstract

We have examined the formation of 3C SiC thin films on Si substrates by chemical vapor deposition (CVD) method using vinysilane as a single precursor. The epitaxial 3C-SiC film was successfully grown on Si(111) substrate at a lower temperature of 1000 °C. In addition, in-situ phosphorus doping for polycrystalline 3C-SiC was achieved using tri-ethyl-phosphorus as a dopant source. The active dopant concentration as high as 8.2×1019 cm−3 and the resistivity as low as 1.9×10−2 Ωcm was obtained. This resistivity value is comparable to the epitaxial 3C-SiC film formed on Si substrate ever reported at the same dopant concentration region. The fact that resistivity as low as single crystalline films can be obtained at a low temperature of 900°C promises that CVD-grown 3C-SiC films using a single precursor of vinylsilane is a suitable material for a wide range of applications.