Crystal Growth of CuInSe2 by the Method of Horizontal Bridgman with Three Temperature Zones

Abstract

The single crystals of CuInSe2 were prepared by the method of horizontal Bridgman with three temperature zones (3THB method). The Se content of the crystals increases with an increase of the Se vapor pressure under which the crystals are grown. The crystals prepared under the higher pressure than 10 Torr showed p-type conduction and was single phase, but those for the lower pressure showed n-type conduction and contained CuIn alloy phase. The Hall mobility of p-type crystals is maximum and the carrier concentration is minimum at 10 Torr of the Se vapor pressure.