Abstract
Single crystalline β-FeSi 2 with a low carrier density has been grown by a temperature gradient solution growth method using Zn solvent. The crystals were polyhedral with clear growth facets. Hall measurements revealed that the crystals showed p-type conductivity. The hole concentration and Hall mobility at room temperature were about 4×10 17 cm −3 and about 19 cm 2 /V s, respectively.
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