Abstract
We have investigated the crystal growth mechanism of spherical Si fabricated by a dropping method. The Si spheres were classified into two categories by surface morphology. The grain size of a Si sphere with a smooth surface is larger than that with a rough surface. To investigate the crystal growth mechanism of the spheres, Si samples with various crystal sizes were observed. Si sample size is related to Si droplet size of, which influences the ease of solidification. Large Si droplets take longer to solidify than small Si droplets. Si samples 4, 2 and 1 mm in diameter correspond to the initial, intermediate and final stages of crystal growth, respectively. In the Si sample 4 mm in diameter, a disk of (111) plane crystals is observed. This result suggests that the initial crystal growth of the Si spheres consisting of large grains involves the formation of a disk of (111) plane Si crystals. The crystal growth mechanism for a Si sphere 1 mm in diameter is proposed.
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