Crystal growth kinetics in (GeS 2) 0.2(Sb 2S 3) 0.8 glass

Abstract

The crystal growth kinetics of Sb 2S 3 in (GeS 2) 0.2(Sb 2S 3) 0.8 glass has been studied by DSC and optical microscopy. The linear growth kinetics of Sb 2S 3 has been observed in the temperature range 525 K ≤ T ≤ 556 K ( E G = 295 ± 3 kJ mol −1). From the reduced growth rate plot (i.e., growth rate corrected for viscosity) as a function of supercooling it has been found that the most probable mechanism is interface controlled 2D nucleated growth. The DSC data, corresponding to the bulk sample under isothermal and non-isothermal, can be described by the Johnson–Mehl–Avrami equation for the kinetic exponent m ≅ 2.