Crystal growth from the melt

Abstract

Doping striations in silicon crystals grown by the Czochralski technique are examined. They are found to correspond closely to striations existing in solution-grown epitaxial layers of gallium arsenide and silicon. It is, therefore, concluded that the kinetic growth mechanisms which are active in solution-growth, are equally valid for melt-growth. Since growth from solution occurs laterrally, it is mainly the orientation of the growth interface that is decisive of whether facet growth, near-facet growth, terrace growth or terrace-free growth predominates. These growth mechanisms are described and their influence on material properties, in particular on dopant homogeneity, is discussed. The mechanism of terrace growth is applied to explain non periodic and discontinuous striations, and striations, which are not parallel to the growth interface. The morphology change of a growth interface, which develops instabilities, is described in terms of lateral microscopic growth.