Abstract
Chemical vapor transport methods have been used to grow single crystals of IrO 2 and RuO 2 in all silica systems. The morphology of the crystals was generally rod-like; extensive twinning was often observed. The twin plane found in RuO 2 was (301) and in IrO 2 was (101). Lattice parameters were determined at room temperature. Residual (electrical) resistivity ratios ( θ (300°) θ (4.2°) from 180 to to > 4000 were obtained for RuO 2 and values of ∼ 1200 for IrO 2. No simple correlation was found between growth conditions (temperature and atmosphere) and the variations in lattice parameters and/or resistivity ratios.
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