Abstract
Bulk single crystals of Yb3+:Gd3(AlxGa1−x)5O12 (Yb:GAGG) with dimensions of Φ26mm×30mm were successfully grown using the Czochralski method. The nominal Yb and Al contents in the raw materials were 5.0 and 10.0at%, respectively. The effective segregation coefficients of Yb3+ and Al3+ ions were measured, and the doping concentrations of Yb3+ and Al3+ ions in the crystal were calculated to be 6.25–6.03at% and 12.0–11.67at% along the crystal growth direction, respectively. The crystalline perfection of the as-grown crystal was evaluated by high-resolution X-ray diffraction (HRXRD). The thermal properties, including thermal expansion, specific heat and thermal conductivity, have been studied in detail. In addition, the thermal-optical coefficient and the thermal shock resistance parameters were also calculated. Our results show that Yb:GAGG crystal has potential application in the field of high power solid state laser.
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