Abstract
Ca2MgSi2O7:Eu3+ films were deposited on Al2O3 (0001) substrates by pulsed laser deposition. The films were grown at various oxygen pressures ranging from 100 to 400mTorr. The crystallinity and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD and AFM respectively showed that the Ca2MgSi2O7:Eu3+ films had a zircon structure and consisted of homogeneous grains ranging from 100 to 400nm depending on the deposition conditions. The radiation emitted was dominated by a red emission peak at 620nm. The maximum PL intensity of the Ca2MgSi2O7:Eu3+ films grown at 300mTorr was increased by a factor of 1.3 compared to that of Ca2MgSi2O7:Eu3+ films grown at 100mTorr. The crystallinity, surface roughness and photoluminescence of the thin-film phosphors were strongly dependent on the deposition conditions, in particular, the oxygen partial pressure.
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