Abstract
The Bridgman growth of Nd doped Bi 4Si 3O 12 (BSO) single crystals are reported for the first time. Good quality crystals were grown with Nd concentration level as high as 5.0 at%. It has been found that the absorption coefficients at the peak wavelengths of 743 and 809 nm were 34 and 19 cm −1, respectively, for 5.0 at% Nd doping. The distribution coefficient of Nd in BSO was also determined by means of chemical analysis and it was found to be 1.1. Fluorescence lifetime measurement was also carried out and the intrinsic lifetime of fluorescence intensity, τ 0 was calculated to be 268 μs.
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