Abstract
WHM materials (W = Zr/Hf, H = Si/Ge/Sn, M = S/Se/Te) represent a large family of topological semimetals, which have attracted intensive interest since they are considered to be good candidates for studying various topological states. Here, we report the crystal growth, characterization, and electronic properties of HfSiS, ZrGeS, and ZrGeSe. All samples were prepared by a chemical vapor transport method with I2 as a transport agent, and the growth conditions were optimized. X-ray diffraction (XRD) measurements showed that the as-grown crystals crystallized in a PbFCl-type layered structure. They all showed metallic behavior from temperature-dependent resistivity measurements and the carrier densities were estimated to be in the order of 1021 cm−3. A large magnetoresistance of up to 1200% and an obvious Shubnikov–de Hass (SdH) oscillation were observed for HfSiS.
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