Abstract
The thermostability of lanthanum substituted bismuth titanate, Bi4-xLaxTi3O12 (BLT), with La-content up to x=0.75 was investigated using differential thermal analysis. Subsequently, BLT and Bi4Ti3O12 (BIT) single crystals were grown by a self-flux method. The BLT crystals with two different ranges of La content, x=1.0–1.5 and 0<x<0.1, were obtained using starting materials with mole ratio BLT(x=0.25):Bi2O3=1:9. Segregation phenomena of La during crystal growth process were observed. A comparison of dielectric and ferroelectric properties in BIT and BLT crystals was performed. The La incorporation led to a significant increase in the coercive field value, Ec, of BIT single crystals.
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