Abstract
Spin-disorder contribution to the electrical resistivity of NdSn 3 within the temperature range 6–100 K associated with the crystal-field splitting of the ground state multiplet ( I = 9 2 ) has been calculated. The experimental data are compared with the theoretical predictions and qualitative agreement is obtained.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
