Abstract
The characterization of silicon spheres 1 mm in diameter, which were produced by a dropping method and solar cell performance using spheres are reported. Scanning electron microscopy observations of the Si spheres after Dash etching and X-ray pole figures indicate that the spherical Si has many defects and crystal grains. Systematic study of the crystal growth temperature and the atmosphere in the dropping area yields improvements in the crystallinity as well as a decrease in the concentrations of oxygen and carbon. Moreover, the spherical Si solar cell performance improved because these impurities are the prime factor for recombination centers.
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