Abstract
The influence of doping on the generation of misfit dislocations in AlAs/GaAs Bragg reflectors and vertical cavity surface emitting laser structures grown by molecular beam epitaxy has been investigated by X-ray topography and diffractometry. While carbon doping reduces the lattice constants of AlAs and GaAs considerably, the influence of silicon doping is less clear. However, silicon is well known to reduce the mobility of dislocations. In the present work it is shown that both dopants prevent the relaxation of 3 μm thick Bragg reflectors and reduce considerably the density of misfit dislocations in complete laser structures. Laser structures with a beryllium-doped Bragg reflector, however, contain a high density of misfit dislocations for a wide range of growth temperatures. These dislocations are distributed over the whole layer stack; their topographic contrasts vary along the dislocation lines. Contrast simulations show that these changes may be attributed to the depth location of the defects in the stack.
Published Version
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