Crystal defects and junction properties in the evolution of device fabricationtechnology

Abstract

In this paper, the correlation between dislocation density and transistor leakagecurrent is demonstrated. The stress evolution and the generation of defects arestudied as a function of the process step, and experimental evidence is given ofthe role of structure geometry in determining the stress level and hence defectformation. Finally, the role of high-dose implantations and the related siliconamorphization and recrystallization is investigated.