Abstract
Zinc Selenide (ZnSe) as a prominent II-VI semiconductor is notable for its excellent performance on high efficiency electronic and optoelectronic devices including blue light-emitting diodes, lasers, and blue/ultraviolet-light-sensitive photodetectors, which are of considerable interest for applications in optical storage, lighting and illumination, biomedical sensing, etc. The effective utilization of ZnSe is owing to its superior properties such as wide bandgap, low optical absorption in the visible and infrared spectral region, and intense edge luminescence in the short-wavelength spectral region. The preliminary requisite to satisfy all those essential properties is the crystalline quality. Therefore, the realization of high-performance devices requires high-quality ZnSe bulk crystals with minimized structural defects. In order to overcome limitations and continuously fulfill the requirement of modern device applications, obtaining a comprehensive understanding on ZnSe crystallographic structure and defect formation mechanism is crucial. In this study, characterization techniques including synchrotron white beam X-ray topography (SWBXT), optical microscopy and high-resolution triple X-ray diffraction (HRTXD) were conducted on seeded and self-seeded ZnSe crystals grown by physical vapor transport (PVT) method in horizontal and vertical growth configurations. The effect of seeding condition and gravity vector orientation with respect to growth geometry on crystalline quality and defect structures is investigated. The presence of grains and the occurrence of twinning is revealed and analyzed. This study provides a clear understanding of factors that causes ZnSe crystal quality variation during the growth process, which contributes to achieving the routine production of high-quality ZnSe crystal and modern device enhancement. Figure 1
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
