Abstract
Quasi-crystal-chemical formulas that take into account the generation of point defects and defect complexes have been proposed for nonstoichiometric, self-doped, and oxygen-doped n- and p-type ZnSe crystals. The defect densities and electron, hole, and Hall carrier concentrations have been evaluated as functions of nonstoichiometry and dopant (Zn, Se, and O) concentration, and conditions have been identified for producing zinc selenide with a given conductivity type and tailored carrier concentration.
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