Abstract
Persistent photo-induced magnetization (PPM) in low bandwidth manganite Pr1−xCaxMnO3 (PCMO) thin film is reported in the low hole doped regime (x = 0.1). X-ray diffraction, x-ray photoelectron spectroscopy, and magnetic measurements in dark and under illumination on the as-grown, vacuum, and oxygen annealed thin films of PCMO showed that the PPM effect is strongly dependent on the crystal symmetry, low angle grain boundaries, and the Mn valence states in the material. Compared with the as-grown and vacuum annealed film, the oxygen annealed film shows much less low-angle grain boundaries, higher crystal symmetry, and long range ferromagnetic (FM) ordering and in this sample PPM is not significant. These results clearly indicate that in this large band gap material PCMO, photo-induced FM interaction mainly arises due to improved domain-wall movement of the short range FM clusters. Significant PPM can be obtained for films with higher amount of grain boundaries, oxygen vacancies, and strain related defects.
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