Crystal and faceted dendrite growth of silicon near (1 0 0)

Abstract

The crystal growth shape (CGS) and faceted dendrite growth of silicon near (100) are observed by in situ observation. The morphological transformations of the facets and curved orientations on the CGSs under different undercoolings (ΔT) are investigated, and the growth mechanism of the faceted dendrite is clarified. (110) facets with a low growth velocity and (100) curved interface with a relatively high growth velocity are observed on the crystal during the formation of silicon CGS, which shows a perfect foursquare shape dominated by (110) facets. At a relatively high ΔT, a faceted dendrite with a flat tip appears at the (110) facet of CGS. The (100) curved interface disappears with decreasing curvature. With increasing ΔT, both facet and curved interface growth velocities increase linearly, and the rate of curvature decrease increases. A two-dimensional image is developed to elucidate the growth mechanism of silicon 〈110〉 faceted dendrites near (100).