Cryogenic Performance of RF MEMS Switch Contacts

Abstract

A series of experiments was performed to characterize RF microelectromechanical system switch performance under variable environmental conditions and cryogenic temperatures. Data were recorded in helium and nitrogen environments to lower stiction failure rates as well as to circumvent switch bouncing arising from low pressure at cryogenic temperatures. Contact resistance values were observed to be lower at cryogenic temperatures but still two orders of magnitude higher than the values predicted for the constriction resistance of gold asperity contacts, consistent with the presence of adsorbed films on the contacts. An asperity-heating model was applied, from which it was deduced that contact voltages can selectively disassociate adsorbed films from the contact surface while not softening the gold asperity contacts. The results are consistent with the reduced mobility of the adsorbed surface films at cryogenic temperatures.