CRYOGENIC OPERATION OF GaN SCHOTTKY RECTIFIERS

Abstract

We report for the first time operation of GaN Schottky rectifiers under cryogenic temperatures. A 600V, 4A GaN Schottky rectifiers from Velox Semiconductors has been used for the characterization. Forward conduction and reverse blocking performance was measured down to 77K. Two Schottky barrier heights have been noticed at low temperatures and a tunneling limited reverse leakage current was observed for the rectifier.