Abstract
The mechanical loss of amorphous thin films of germania (GeO2) and titania-doped germania (Ti:GeO2) deposited by ion-beam sputtering onto silicon double-paddle oscillators was studied from 10 K to 290 K. Undoped germania was found to show a wide cryogenic mechanical loss peak centered at K with , which decreases to as Ti-concentration increases to 44%. In addition to decreasing the height of this low-temperature peak, Ti-doping increases its width, and shifts its position toward lower temperatures. Annealing reduces the room temperature mechanical loss of Ti:GeO2 and increases its cryogenic mechanical loss, which is consistent with trends observed in most amorphous oxides.
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