Abstract
In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum(<TEX>$Alq_3$</TEX>)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and <TEX>$Alq_3$</TEX> was manufactured 40 nm, 60 nm, respectively under a base pressure of <TEX>$5{\times}10^{-6}$</TEX> Torr using a thermal evaporation. The <TEX>$Alq_3$</TEX> used for an electron-transport and emissive layer were evaporated to be at a deposition rate of <TEX>$2.5\;{\AA}/s$</TEX>. When the deposition rate of TPD increased from 1.5 to <TEX>$3.0\;{\AA}/s$</TEX>, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is <TEX>$2.5\;{\AA}/s$</TEX>, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is <TEX>$2.0\;{\AA}/s$</TEX> and <TEX>$3.0\;{\AA}/s$</TEX>, the external quantum efficiency was improved by four-times and two-times, respectively.
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