Abstract
CrSiO cermet thin films were prepared by flash evaporation in vacuum of a cermet powder containing 70% Cr and 30% SiO. The structure of obtained films, both un-annealed and annealed, was examined using X-ray diffraction, electron microscopy and electron diffraction. The films were amorphous and were composed of grains embedded in a matrix. The temperature dependence of resistance was also determined. Current-voltage characteristics appear to be non-linear for voltages higher than 40 V. From these investigations it has been possible to start manufacture of high stability resistors with resistances, after special treatment, ranging from 10 2 to 10 7Ω.
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