Crosstalk Suppression Method for GaN-Based Bridge Configuration Using Negative Voltage Self-Recovery Gate Drive

Abstract

In order to suppress the crosstalk in gallium nitride (GaN) based bridge configuration, a novel negative voltage self-recovery gate drive (NVSRGD) is proposed in this article. The resistor–capacitor–diode voltage divider is applied to establish the negative gate–source voltage and suppress the impact of positive crosstalk. The antiparallel diode is added to constitute a low-impedance Miller current path from the driver integrated circuit (IC) to the GaN device. It works together with the self-recovery gate–source voltage to suppress the negative crosstalk, which not only prevents the GaN device from the negative overstresses but also reduces the reverse conduction loss during the dead time. The NVSRGD is composed of a few passive components, which are suitable for integrating into the driver IC. The capacitors and resistors of the NVSRGD are designed to determine the negative voltage level and the restore time. Additive separate negative voltage power supplies or active devices are not needed. The double-pulse test based on GS66508B verifies the effectiveness of the proposed method for suppressing the positive and negative crosstalk of GaN devices.