Crosstalk optimization and gate oxide reliability analysis in intercalation doped MLGNR with reduced vertical thickness

Abstract

In this paper, the performance of intercalation doped multilayer graphene nanoribbons (MLGNR) with reduced vertical thickness is investigated, and the impact of crosstalk on latency and gate oxide reliability is analyzed. An unconditionally stable FDTD method is used to analyze the transient output of the circuit. Several cases of MLGNR with reduced vertical thickness under different doping materials, stacking directions and contact modes have been discussed. The experimental data show that the Li-doped MLGNR interconnect with horizontal stacking and side contact (SC) has the most outstanding performance, and the delay fluctuation caused by crosstalk is improved by 17.8 % ∼ 68.1 % compared with the Cu interconnect. When specularity p = 0.2, the PDCP (power delay crosstalk product) is found 44.2 % ∼ 61.5 % lower than the Cu interconnect. In addition, the AFR (average failure rate) has also been investigated, and the data showed that the AFR of Li-doped SC-MLGNR remained lowest among all interconnects discussed, for comparison the Cu interconnect is 4.2–5 times larger than the former. In summary, the vertical thickness reduced Li-doped horizontally stacked SC-MLGNR is very promising as carbon nano interconnects in the next generation of integrated circuits.