Abstract
Substrate integrated waveguide (SIW) represents an emerging technology for the implementation of waveguide components in planar form, in the frequency range of microwaves and mm-waves. While the SIW is similar to a classical metallic waveguide, the structure is not completely shielded and may be subject to a radiation leakage. This leakage could cause a crosstalk between adjacent SIW interconnects. While for other structures, e.g., microstrip lines, the determination of the crosstalk was widely investigated, no quantitative relationship was previously derived in the case of SIW structures. In order to fill this gap, this paper presents for the first time the derivation of a formula to calculate the crosstalk in SIW structures.
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