Abstract
For the hard-switch applications of the half-bridge circuit based on SiC MOSFET, the crosstalk generation mechanism of the half-bridge circuit in the switching on and off process is analysed. The influence of the driving resistance and stray inductance of driving circuit on the crosstalk is simulated and analysed. In the single-chip half-bridge circuit, the Miller clamp method with BJT + diode is used. By increasing the driving resistance and reducing the clamp circuit inductance, the crosstalk suppression effect can greatly improve. It is an effective way to optimize the clamping circuit and reduce the clamp circuit inductance without affecting the switch speed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
