Abstract
For the hard-switch applications of the half-bridge circuit based on SiC MOSFET, the crosstalk generation mechanism of the half-bridge circuit in the switching on and off process is analysed. The influence of the driving resistance and stray inductance of driving circuit on the crosstalk is simulated and analysed. In the single-chip half-bridge circuit, the Miller clamp method with BJT + diode is used. By increasing the driving resistance and reducing the clamp circuit inductance, the crosstalk suppression effect can greatly improve. It is an effective way to optimize the clamping circuit and reduce the clamp circuit inductance without affecting the switch speed.
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