Cross-sectional high-resolution transmission electron microscopy at Mo/Si multilayer stacks

Abstract

Abstract Using a Mo/Si multilayer stack, capabilities and limits of high-resolution transmission electron microscopy with respect to thin film analysis are pointed out. Image processing is shown to provide non-subjective criteria for the determination of layer thicknesses. In comparison to measurements by X-ray reflectometry, an integrating method capable of determining multilayer periodicities, preparation and observation artefacts in transmission electron microscopy is discussed. Special emphasis is placed on cleavage as a powerful method for TEM sample preparation, its advantages and disadvantages.