Abstract
Thermal management is a crucial component in analyzing the performance of III–V semiconductor superlattice-based optoelectronic devices. Here we provide a rigorous physical analysis of cross-plane thermal conduction in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interfacial structural characteristics. We present a comprehensive study of superlattice thermal transport, including structure-property relations, spectral and modal descriptions, and contrast it with in-plane heat conduction thereby explaining the resultant anisotropy in III–V semiconductor superlattices. Our results provide key physical insights into rational material design for thermal modulation in optoelectronic devices.
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