Abstract
The variable range hopping (VRH) resistivity in a gated δ-doped GaAs/AlGaAs heterostructure was measured at temperatures down to 280mK. At low temperatures, the logarithm of the resistivity follows T−1/2 behaviour, which corresponds to the existence of a soft (linear) Coulomb gap in the density of states (DOS) at the Fermi level (FL). As the temperature is increased, there is a crossover to T−1/3 behaviour, corresponding to a constant DOS outside the Coulomb gap. A quantitative analysis of the resistivity data allows us to determine the width of the Coulomb gap and the DOS around the FL.
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