Abstract
Abstract: Mott variable-range hopping (VRH) is characterized by an exp [1/T1/4] behavior in the temperature dependence of resistivity and is generally observed near the metal–insulator transition as electron screening increases and the Coulomb gap disappears near the metallic phase, while Efros–Shklovskii VRH, characterized by exp [1/T1/2], is found deeper in the insulating region. We have investigated the transport properties of Bi-doped fullerene C60. Samples were prepared via solid state reaction in a sealed quartz tube near 600°C. The resistivity data can be fit with a single function exp [1/Tυ] (υ=1/4 or 1/2, depending on the Bi concentration) over the entire temperature range below 300 K and over 5–6 orders of magnitude in resistivity. υ changes from 1/4 to 1/2 as the Bi concentration increases, suggesting a crossover from Mott VRH to intergranular tunneling at higher Bi concentration. The thermoelectric Seebeck coefficient was also measured and is about 20 μV/K at room temperature. It decreases with decreasing temperature. The thermal conductivity of the doped samples is extremely low.
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